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  ? semiconductor components industries, llc, 2014 may, 2014 ? rev. 1 1 publication order number: mbra320/d mbra320t3g surface mount schottky power rectifier sma power surface mount package employing the schottky barrier principle in a large area metal?to?silicon power diode. state of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. ideal ly suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system. features ? small compact surface mountable package with j?bent leads ? rectangular package for automated handling ? highly stable oxide passivated junction ? very low forward voltage drop ? guardring for stress protection ? nrvba prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these are pb?free devices mechanical characteristics: ? case: epoxy, molded ? weight: 70 mg (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? shipped in 12 mm tape, 5000 units per 13 inch reel ? polarity: cathode lead indicated by polarity band ? esd ratings: machine model = c esd ratings: human body model = 3b ? device meets msl 1 requirements maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 20 v average rectified forward current (at rated v r , t l = 100 c) i o 3.0 a non?repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 80 a storage temperature t stg ?65 to +150 c operating junction temperature t j ?65 to +125 c voltage rate of change (rated v r , t j = 25 c) dv/dt 10,000 v/  s stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. device package shipping ? ordering information schottky barrier rectifier 3.0 amperes 20 volts marking diagram sma case 403d a32 ayww  http://onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. mbra320t3g sma (pb?free) 5000/tape & reel cathode anode a32 = device code a = assembly location y = year ww = work week  = pb?free package 12 1 2 nrvba320t3g sma (pb?free) 5000/tape & reel
mbra320t3g http://onsemi.com 2 thermal characteristics characteristic symbol value unit thermal resistance ? junction?to?lead (note 1) thermal resistance ? junction?to?ambient (note 1) r jl r ja 15 80 c/w electrical characteristics maximum instantaneous forward voltage (note 2) (i f = 3.0 a, t j = 25 c) v f 0.50 volts maximum instantaneous reverse current (note 2) (v r = 20 v) i r t j = 25 c t j = 100 c ma 2.0 20 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 1. mounted on 2 square pc board with 1 square total pad size, pc board fr4. 2. pulse test: pulse width = 300 s, duty cycle 2.0%. typical characteristics 10 0.1 0.2 0.0 0.4 0.6 v f , instantaneous forward voltage (v) figure 1. typical forward voltage figure 2. maximum forward voltage 1 0.8 i f , forward current (amps) t j = 25 c t j = 125 c t j = 100 c t j = ?65 c v f , maximum instantaneous forward voltage (v ) i f , forward current (amps) 1.0 0.3 0.1 0.5 0.7 0.9 10 0.1 0.2 0.0 0.4 0.6 1 0.8 t j = 25 c t j = 125 c t j = 100 c t j = ?65 c 0.3 0.1 0.5 0.7 0.9 1. 0
mbra320t3g http://onsemi.com 3 typical characteristics 020 10 v r , reverse voltage (v) figure 3. typical reverse current figure 4. maximum reverse current i r , reverse current (amps) t j = 25 c t j = 100 c 1.e?06 1.e?04 1.e?03 1.e?02 1.e?01 02 0 10 v r , reverse voltage (v) i r , maximum reverse current (amps ) t j = 25 c t j = 100 c 1.e?06 1.e?04 1.e?03 1.e?02 1.e?01 0 130 50 60 70 80 t l , lead temperature ( c) figure 5. current derating figure 6. forward power dissipation 100 110 i o , average forward current (amps) 0 4 0123 i o , average forward current (a) 5 5 p fo , average power dissipation (w) 1 2 3 4 5 square wave dc 1 2 6 6 r  jl = 15 c/w square wave dc 1.e?05 515 515 3 4 1.e?05 figure 7. typical capacitance 700 0 36 0 162024 v r , reverse voltage (v) 100 28 32 40 c, capacitance (pf) t j = 25 c 200 300 400 500 600 4812 90 120
mbra320t3g http://onsemi.com 4 typical characteristics figure 8. thermal response, junction?to?ambient (min pad) t, time (s) 0.0001 0.001 0.1 0.000001 0.01 1 10 100 1000 r (t) , transient thermal resistance ( c/w) 0.01 1 10 1000 d = 0.5 0.2 0.1 single pulse 0.05 0.02 0.01 figure 9. thermal response, junction to ambient (1 inch pad) t, time (s) 0.0001 0.001 0.1 0.000001 0.01 1 10 100 100 0 r (t) , transient thermal resistance ( c/w) 0.01 1 10 100 d = 0.5 0.2 0.1 single pulse 0.05 0.02 0.01 100 0.1 0.00001 0.1 0.00001
mbra320t3g http://onsemi.com 5 package dimensions sma case 403d?02 issue g dim a min nom max min millimeters 1.97 2.10 2.20 0.078 inches a1 0.05 0.10 0.20 0.002 b 1.27 1.45 1.63 0.050 c 0.15 0.28 0.41 0.006 d 2.29 2.60 2.92 0.090 e 4.06 4.32 4.57 0.160 l 0.76 1.14 1.52 0.030 0.083 0.087 0.004 0.008 0.057 0.064 0.011 0.016 0.103 0.115 0.170 0.180 0.045 0.060 nom max 4.83 5.21 5.59 0.190 0.205 0.220 h e e bd l c a a1 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension b shall be measured within dimension l. polarity indicator optional as needed (see styles) 4.000 0.157 2.000 0.079 2.000 0.079  mm inches  scale 8:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mbra320/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative


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